2026 National Conference on Electron Microscopy          

The conference is expected to welcome approximately 2,000 researchers, scientists, and engineers. Its 16 sessions will explore developments in electron microscopy and their applications across multiple research fields.

Tescan at the Event 

Tescan will participate as an exhibitor and speaker, presenting an Integrated Material Characterization Workflow that supports materials research across multiple length scales. 

At Booth A10-11 on F2, Tescan will showcase:   

• Tescan TENSOR for Efficient, Reliable, and Scalable Materials Characterization.  
• Tescan AMBER X 2 Plasma FIB-SEM: Clean, fast, and precise sample preparation, 3D reconstruction, and correlative ToF-SIMS analysis.
• NEW: Tescan CLARA™ UHR-SEM: A field-free UHR SEM for high-contrast imaging of sensitive materials.  
• Orage 2 Ga⁺ ion column: Enables up to 40% faster automated TEM preparation.
• Nanospace with ToF-SIMS: An integrated FIB–ToF-SIMS platform for advanced nanoscale characterization. 

The technologies presented will also highlight AURA Gentle Ion Beam, integrated high-resolution ToF-SIMS, multimodal analytical capabilities including 3D EBSD and 3D EDS, and 4D-STEM in SEM/FIB-SEM.

Scientific Presentations 

• Session 8: Focused Ion Beam (FIB) Applications in Materials Science 
  Latest Developments in Tescan FIB-SEM for Materials Characterization 
  Speaker: Xinli Zhu, BD Manager – FIB-SEM

Presentation dates and times will be announced by the conference organizer.

What You Will Learn 

• How TENSOR makes advanced 4D-STEM more accessible and efficient for materials characterization and research.
• How the Tescan AURA™ Gentle Ion Beam enables precise, low-energy cleaning while preserving sample integrity and supporting electron transparency and consistent quality in ultrathin samples.
• How integrating a 4D-STEM detector into a FIB-SEM can move sample quality control upstream, reducing TEM instrument time and costs.
• What's new in the third generation of Tescan CLARA™. 
  
  

Who Should Attend

• Semiconductor failure analysis and reliability engineers
• Microscopy and materials specialists
• Semiconductor and advanced packaging researchers
• Lab managers, technical leaders, and academic researchers
  
  

Who Should Attend 

• Researchers and scholars from universities and research institutes working in materials science.
• Scientists and engineers from industrial enterprises and R&D centers.
• Researchers using electron microscopy, FIB-SEM, 4D-STEM, ToF-SIMS, and related characterization techniques.
  
  

Why Attend

The conference provides an opportunity to explore current developments in electron microscopy and discuss practical approaches to materials characterization. Visit Tescan to learn how complementary technologies can support integrated workflows, from structural investigation to functional insights at different scales.