for advanced research in semiconductors
Delayering and Electrical Failure Analysis
Metrology and Process Development
Measure critical dimensions and layer profiles to refine process control
Optimizing semiconductor manufacturing processes—such as strain engineering, deposition control, and interface design—requires precise structural, chemical, and crystallographic measurements. Tescan TENSOR 4D-STEM delivers multimodal nanoscale characterization, including phase mapping, strain analysis, and compositional data, in a single dataset. For process verification at the atomic scale, Tescan also provides complete TEM lamella preparation solutions, ensuring that samples for transmission electron microscopy are site-specific, damage-free, and representative of the process under evaluation.
Non-destructive Failure Analysis with Micro-CT
Inspect internal structures without sample damage using 3D X-ray imaging
Identifying hidden defects like voids, delamination, or die attach issues without altering the device saves time and preserves critical context. Tescan micro-CT systems provide non-destructive, high-resolution 3D and 4D imaging of complete packages and assemblies, enabling fault detection, volume inspection, and dynamic in-situ studies while keeping the sample intact for further analysis.
Package-Level Sample Preparation for Failure Analysis
Access features deep within encapsulated devices for detailed investigation
Reaching internal defects in complex semiconductor packages requires precise, contamination-free preparation. Tescan Plasma FIB-SEM as well as Laser assisted workflows enable the fastest site-specific high quality cross-sectioning of packages, revealing interconnects, die structure, and material interfaces for detailed inspection, imaging, or further analytical techniques—without compromising surrounding structures.
Research and Development
Characterize structures, interfaces, and materials to support next-generation device innovation
Developing next-generation devices—from 3D NAND and DRAM to GAA and FinFET logic—demands a complete toolkit for structural, electrical, and chemical characterization. Tescan’s portfolio of SEM, FIB-SEM, STEM, and micro-CT systems supports all stages of semiconductor R&D, from concept validation to process qualification, enabling faster iteration and innovation cycles.
TEM Lamella Preparation
Prepare ultra-thin lamellae from specific sites with precision for transmission electron microscopy
High-quality transmission electron microscopy starts with precisely prepared, site-specific specimens. Tescan Ga⁺ FIB-SEM and plasma FIB-SEM platforms offer fully automated workflows for producing thin, damage-minimized lamellae from even the most advanced semiconductor structures. These solutions ensure artifact-free samples suitable for atomic-scale as well as analytical analysis of devices, packages, and interconnects.
"In the semiconductor industry, we’re not just providing equipment; we’re offering complete solutions and workflows that integrate seamlessly into our customers' processes. For example, we’ve developed a large-volume ablation workflow that combines X-ray micro-CT for non-destructive analysis, femtoseconds laser combined with plasma FIB for both fast localization and detailed failure analysis. This combination allows our customers to move from a high-level, non-invasive scan to targeted, detailed investigations, optimizing both speed and accuracy. Given the high sample throughput requirements in this industry, our customers need workflows that are not only efficient but scalable. With TESCAN, we offer connected systems that can handle the complexity and volume of today’s semiconductor research demands."
HERVÉ MACE
Global Director of Business Development
for every electron microscopy
workflow
TESCAN TENSOR
Analytical STEM for fast, reproducible strain, phase, and composition analysis of semiconductor devices.TESCAN TENSOR is an analytical STEM platform tailored to meet the precision, automation, and consistency demands of advanced semiconductor labs. It integrates 4D-STEM, beam precession, and high-throughput EDS into one system for precise structural and elemental characterization of device features at the nanoscale—optimized for productivity across shifts and sites.
- Delivers high-precision strain and phase mapping using precession-enhanced 4D-STEM, even at the 3 nm node.
- Reduces operator variability with fully automated alignments, intuitive workflows, and real-time data processing.
- Minimizes sample damage and contamination using low-dose, high-current workflows in near-UHV conditions.
TESCAN SOLARIS X 2
Plasma FIB-SEM for fast, artifact-free cross-sectioning and Ga-free sample prep of advanced semiconductors packages.SOLARIS X 2 combines the speed of Mistral™ Xe plasma FIB with Triglav™ UHR SEM to expose and analyse complex packaging defects rapidly and prepare high-quality lamellae for TEM analysis—all on one system. TRUE X-sectioning and Rocking Stage technologies enable clean, repeatable cross-sections across polymers, ceramics, and stacked devices even near to mm scale.
- Accelerates failure localization with live end-pointing and deep, clean Xe FIB cross-sectioning of multilayer materials.
- Take advantage of the Precise Mistral™ Plasma FIB for TEM lamella prep with Ga-like precision—freeing capacity from conventional Ga FIBs when needed.
- Increases throughput with automated alignments and workflows optimized for fast switching between sample and analysis types.
TESCAN SOLARIS 2
Automated Ga⁺ FIB-SEM for precise TEM lamella prep in semiconductor R&D and process control.SOLARIS 2 integrates high-resolution Triglav™ SEM, Orage™ Ga FIB, and AutoTEM Pro™ software to deliver ultra-thin lamellae from sub-10 nm nodes. Designed for 24/7 readiness, the system supports planar, top-down, and inverted workflows with minimal training, ensuring repeatable outcomes across users and shifts.
- Produces ultra-thin (<50 nm) TEM specimens using AI-guided workflows and real-time end-pointing.
- Runs fully unattended prep sequences, including overnight alignments and batch processing.
- Increases reproducibility and lab output by minimizing manual intervention in advanced TEM workflows.
TESCAN AMBER X 2
Universal Plasma FIB-SEM for damage-free delayering and in-situ probing of advanced ICs.AMBER X 2 enables automated, repeatable delayering and nanoprobing with sub-10 nm targeting precision. The Mistral™ Xe plasma FIB and BrightBeam™ SEM support high-resolution imaging and fault localization with minimal rework—ideal for logic, memory, and mixed-node device analysis.
- Streamlines fault isolation with recipe-driven delayering and optimized contrast for structure recognition.
- Delivers uniform, artifact-free layer removal using Xe ion beam down to 500 eV and tailored gas chemistries.
- Combines delayering, probing, and imaging in one tool—reducing sample handoffs and operators’ time.