WEBINAR | From Infrastructure to Impact: EM & Micro-CT in Materials Core Facilities

Precise Multi-Ion Implantation for Discovering Full Spectrum of New Materials Possibilites 

Tescan QuiiN 

Tescan QuuiN multi-ion implantation system for nanoscale materials modification
Tescan QuiiN product page 1

Tescan QuiiN (Quantum Ion Implanter at Nanoscale) is a versatile ion beam system designed for implantation applications. With its ability to precisely place ions into material structures, QuiiN is an ideal platform for advanced research in quantum computing and semiconductor technologies. 

  • Precise region localization and controlled dose implantation of selected ions and gases through electrostatic SEM and advanced FIB.

  • In-situ annealing to >950 °C with FurnaSEM 1000 heating stage.

  • Tailored implantation experiments, analytical routines, and point-based milling strategies with Pegasus GUI.

Where Tescan QuiiN

makes the difference

Fine-tune and create new materials surface characteristics by unprecedented milling precision and Isotope Selection seamlessly using the Wien filter in our ion implantation tool.

Activitate dopants, repair unwanted lattice damage and immediately enhance materials properties by In-situ annealing capabilities.

Ensuring a seamless transition in your experimental setups and maximize your research efficiency with switching between specie (N, Ar, O, He, Xe or gas mixtures) or (Au, Ge, Si), all from the same source.

Ensure your resultats are free from photoluminescence artifacts, implantation irregularities and surface damage by excellent dose controlling in the system and removal of the neutral charge.

Visualize and acquire clearer and more accurate resultats, by leveraging the advanced detection capabilities of YAP scientillators.

Precisely control the ion implantation depth through fine control of the acceleration voltage with a range of energy from 3 keV to 30 keV.

Implant a single ion of any species by adjusting the dose precisely prior to the experiment using a ultra sensitive current measurement system.

Locate the area of interest and avoid the ion implantation with a SEM in coincidence point with the FIB column.

Tescan AMBER X2 Applications

_ Application area icon
Tescan AMBER X2 in Materials Science

Gain the detail you need to understand how materials behave, from nanoscale structures to millimeter-scale volumes.

  • Comprehensive 3D characterization for microstructural studies
  • Automated TEM lamella preparation with TEM AutoPrep Pro™
  • Correlative multimodal analysis combining EDS, EBSD and ToF-SIMS
  • Large-volume milling for full-field reconstruction and structural insight

AMBER X2 gives materials scientists a reliable way to study metals, ceramics, polymers and composites with both precision and scale. Its Xe plasma FIB and field-free SEM architecture support high-resolution imaging without unnecessary beam damage. This helpa you explore structure–property relationships and track material changes under load, heat or environmental exposure.

Application area=BT-1
Tescan AMBER X2 in Energy and Batteries

Get a clearer view of electrode architecture, interface behavior, and the mechanisms that drive degradation.

  • Damage-free plasma FIB-SEM workflows for electrodes and interfaces
  • Cross-sectioning and 3D reconstruction of electrodes and solid-state architectures
  • Correlative EDS and ToF-SIMS for chemical and structural gradients
  • Safe, contamination-free milling of lithium-containing and beam-sensitive materials

AMBER X2 helps battery researchers examine internal structures with clarity, from active material morphology to subtle interface changes. Its high-throughput plasma FIB and multimodal analysis tools reveal degradation pathways, lithium distribution patterns, and stability issues. This gives you the insight needed to refine materials and design more reliable energy-storage systems.

_ Application area icon (3)
Tescan AMBER X2 in Semiconductors

Uncover the electrical and structural details of today’s most advanced devices

Uncover the electrical and structural details of today’s most advanced devices with Tescan AMBER X 2 Plasma FIB-SEM. Purpose-built for semiconductor applications, AMBER X 2 combines Xe plasma FIB with proprietary Nanoflat, Chase, and C-Maze chemistries to deliver uniform, artifact-free delayering at sub-10 nm nodes.

The system ensures you have reproducible workflows across logic, memory, and I/O regions, supporting electrical fault isolation, failure analysis, and transistor-level probing.

  • Perform artifact-free delayering with Nanoflat, Chase, and C-Maze chemistries
  • Protect device integrity using low-kV Xe Plasma FIB milling
  • Control every step with end-point detection and live monitoring
  • Integrate delayering with in situ nanoprobing in a single workflow
  • Deprocess I/O and thick metal layers using low angle polishing

Resolve critical details with BrightBeam™ UHR SEM imaging at sub-500 eV

_ Application area icon (1)
Tescan AMBER X2 in Life Sciences

Work confidently across cryogenic and room-temperature workflows, whether you're studying ultrastructure or preparing samples for high-resolution imaging.

  • Large-volume 3D FIB-SEM tomography of hard biological materials, including bone, shell and dental tissue
  • High-quality cryo lamella preparation with MISTRAL™ Plasma FIB for fast rough milling and precise low-energy polishing
  • Integrated CLEM workflows with METEOR 2.0 for accurate ROI targeting
  • Built-in cryo nanomanipulator for temperature-controlled, reliable lift-out
  • Advanced analytical options including EDS, ToF-SIMS and EBSD

AMBER X2 brings plasma FIB speed to demanding life science studies, from large-volume 3D analysis to delicate cryo sample preparation. Its stable beam performance helps you obtain clean, artifact-free results across biological interfaces, mineralized tissues and complex structural hierarchies.

Unlocked content

 

Unlock
Tescan insight

leave a contact to access

Get the most out of Tescan

This is more than information; it's an advantage. We've compiled our technical whitepapers, detailed product flyers, and on-demand webinars to provide you with the knowledge that makes a real difference. Sign up now to access the insights you need to make an impact.

Tescan QuiiN

Technical specification

Tescan QuiiN

SEM column (optional)
  • Resolution at 25 keV: 4 nm
FIB column
  • iVeloce

    • Ion source plasma column (Xe+, O2+, Ar+, He+, N+) including Wien filter
    • Maximum filtered beam current: 35 nA (Plasma source)
    • Resolution at 30 keV: 40 nm (Plasma source) 
    • Ultra-sharp milling and high-resolution imaging
    Veloce
    • LMAIS column (AuGe / AuSi) including Wien filter
    • Maximum filtered beam current: 15 nA (LMAIS)
    • Resolution at 30 keV: 5 nm (LMAIS)
    • Milling with species non contaminating the sample
Chamber
  • Number of ports: 20+
  • Maximum sample size: 180 × 180 × 92 mm 
Heating stage (optional) 
  • Maximum temperature: 950 °C
  • Cooling control: Closed-loop circuit
  • Temperature slope: Programmable from 0.01 °C/s to 3 °C/s 
Vacuum Performances
  • Main Chamber Vaccum: < 9x10-3 Pa
  • Sample Main Chamber Introduction: < 5 min  °C/s to 3 °C/s 

Tescan QuiiN

SEM column (optional)
  • Resolution at 25 keV: 4 nm
FIB column
  • iVeloce

    • Ion source plasma column (Xe+, O2+, Ar+, He+, N+) including Wien filter
    • Maximum filtered beam current: 35 nA (Plasma source)
    • Resolution at 30 keV: 40 nm (Plasma source) 
    • Ultra-sharp milling and high-resolution imaging
    Veloce
    • LMAIS column (AuGe / AuSi) including Wien filter
    • Maximum filtered beam current: 15 nA (LMAIS)
    • Resolution at 30 keV: 5 nm (LMAIS)
    • Milling with species non contaminating the sample
Chamber
  • Number of ports: 20+
  • Maximum sample size: 180 × 180 × 92 mm 
Heating stage (optional) 
  • Maximum temperature: 950 °C
  • Cooling control: Closed-loop circuit
  • Temperature slope: Programmable from 0.01 °C/s to 3 °C/s 
Vacuum Performances
  • Main Chamber Vaccum: < 9x10-3 Pa
  • Sample Main Chamber Introduction: < 5 min  °C/s to 3 °C/s 
Ion implantation pattern in nanoscale material structures created using Tescan QuuiN

GET IN Touch

with specialist

map

Where you can find us:

Tescan
Libušina třída 21
623 00 Brno
Czech Republic

130405923 us US 37.09024 -95.712891 25.3575 29.349345 20.67957527 42.082797 39.91384763 -33.693421 13.93320106 3.039986586 31.997988 38.050985 47.579533 48.1485965 58.375799 54.663142 19.195447 56.975106 50.493053 45.868592 10.79556993 44.35660598 43.2371604 55.536415 14.557577179752773 32.100937 -6.116829 -6.212299277967318 23.7104 -33.471062 31.998740087 -23.69149395 43.462349 51.529848 49.1893523 49.197486 25.072375 31.075811 1.299027 40.676979 52.30150662 51.013813 35.684121 37.479653 52.246622 40.581349 39.911632 -26.1811371 41.818215 33.429928

No distributors found.