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High-Resolution Insights into Chemical Composition

Tescan FIB-SEM Integrated ToF-SIMS for Materials Science

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Bringing advanced chemical characterization to FIB-SEM workflows 

Modern materials research requires comprehensive structural and compositional characterization across multiple length scales, from microstructure to nanoscale features and interfaces. Tescan’s integrated secondary ion mass spectrometry (SIMS) solution combines an orthogonal time-of-flight SIMS (ToF-SIMS) analyzer with a FIB-SEM platform, enabling advanced chemical analysis within a single instrument. Using the focused ion beam to generate secondary ions, the system provides three-dimensional chemical information with high spatial and depth resolution.

Comprehensive insights into material structure and composition  

By integrating ToF-SIMS with multi-contrast SEM imaging and optional analytical techniques available on the same FIB-SEM platform, including EDS, EBSD, Raman spectroscopy, and scanning probe microscopy (SPM), the system enables comprehensive, correlative characterization, providing structural, chemical, crystallographic, and physical insights across a wide range of materials science applications. 

Beyond conventional depth profiling: multimodal 3D characterization

Unlike conventional ToF-SIMS depth profiling, which can be affected by surface topography and material inhomogeneity, multimodal FIB-SEM tomography combines ToF-SIMS analysis with FIB serial sectioning to enable accurate 3D chemical characterization. Correlating SEM-derived structural information with ToF-SIMS compositional data, optionally complemented by EDS and EBSD mapping, provides comprehensive 3D insight into material structure and composition within the same volume of interest.

Chemical mapping with exceptional spatial resolution 

Paired with the high-precision Orage™ 2 Ga FIB, available on Tescan AMBER™ 2 or Tescan SOLARIS™ 2, the integrated ToF-SIMS solution delivers exceptional spatial resolution for chemical mapping of micro- and nanoscale features, while the monoisotopic Ga ion source enables reliable characterization of gallium-containing materials.

Large-scale, high-fidelity ToF-SIMS analysis  

Integrated with Mistral™ Xe Plasma FIB (PFIB) technology on both Tescan AMBER X™ 2 and Tescan SOLARIS X™ 2, the solution enables the preparation and analysis of large cross sections and large-volume multimodal 3D FIB-SEM tomography. The Xe PFIB also eliminates Ga-induced contamination, supporting high-fidelity chemical characterization and enhanced analytical performance. 

  • Insight into material chemistry through the identification of all elements, including hydrogen and other light elements, alongside molecules, molecular fragments, and clusters. 

  • Simultaneous elemental and isotopic analysis enabling isotope ratio evaluation and advanced characterization of nuclear materials. 

  • Visualization of topographical changes alongside ToF-SIMS chemical data through frame-by-frame FIB image correlation.

  • Surface, cross-sectional, and lamella-based chemical characterization enabled by flexible FIB workflows.

  • Assessment of multilayer systems, thin films, and buried interfaces through depth profiling. 

  • More precise chemical information through enhanced chemical species identification and spectral interpretation enabled by the high-mass-resolution H-TOF analyzer.

  • Reliable analysis of insulating and charging materials through localized charge compensation using SEM or an optional flood gun.

  • Cryogenic and inert gas transfer workflows for beam-sensitive, and air-sensitive materials.

  • Efficient interpretation of complex ToF-SIMS datasets using an isotope database, spectral peak fitting, and semi-automated peak identification.

  • Expanded characterization capabilities through integrated EDS, EBSD, Raman spectroscopy, SPM, and other complementary analytical techniques.

  • Broad applicability across materials science disciplines, including nanomaterials, semiconductors, energy materials, geology, nuclear materials, and contamination or impurity analysis.

  • Selectable ToF-SIMS and FIB configurations tailored to application-specific requirements for spatial resolution, surface sensitivity, and molecular information.

WHERE TESCAN FIB-SEM INTEGRATED TOF-SIMS MAKES THE DIFFERENCE

Where ToF-SIMS Extends Beyond EDS

Complex Elemental Information with Superior Light-Element Detection 

EDS is highly effective for elemental analysis but has limited sensitivity to light elements. ToF-SIMS extends compositional characterization through exceptional sensitivity to lithium and detection of hydrogen and other light elements, complementing the characterization of heavier elements and providing information that is often inaccessible with conventional elemental analysis techniques. 

Isotope-Resolved Chemical Characterization 

Unlike EDS, which cannot distinguish isotopes, ToF-SIMS enables isotope-resolved analysis and isotope ratio evaluation. This capability provides additional insight into material origin, transport mechanisms, and isotopic labeling studies. 

Chemical Information Beyond Elemental Composition 

While EDS identifies elemental composition, ToF-SIMS reveals significantly richer chemical information. Detection of atomic species, clusters, molecular ions, and fragments enables a deeper understanding of material chemistry, compounds, and reaction products.

Subsurface and Interfacial Studies Through Depth Profiling  

EDS primarily provides surface and near-surface compositional information. ToF-SIMS depth profiling reveals buried layers, interfaces, and composition changes beneath the surface, enabling detailed characterization of multilayer structures and interfacial phenomena. 

High Spatial Resolution and Exceptional Surface Sensitivity

Using a focused primary ion beam, ToF-SIMS achieves exceptional surface sensitivity and high-spatial-resolution chemical mapping. This enables visualization of nanoscale chemical variations that may be difficult to resolve using electron-excited analytical techniques alone. 

WHERE TESCAN FIB-SEM INTEGRATED TOF-SIMS MAKES THE DIFFERENCE

Beyond Conventional SIMS Workflows

Versatile Instrument Platform 

A single platform integrates SEM, FIB, and ToF-SIMS technologies for high-resolution imaging and navigation, site-specific sample preparation, and comprehensive structural and compositional characterization. 

Correlative Multimodal Characterization 

Seamless integration with advanced analytical techniques, including, EDS, EBSD, Raman spectroscopy, scanning probe microscopy (SPM), and other complementary methods within a single instrument, enables comprehensive in situ correlative characterization. 

Non-Destructive Navigation with SEM 

High-resolution SEM imaging with topographical, material, and channeling contrast allows efficient navigation and precise selection of regions of interest for subsequent localized ToF-SIMS chemical characterization. 

In Situ Site-Specific FIB and Nanomanipulation Workflows  

Extension of surface analysis into the subsurface through site-specific characterization on FIB-prepared cross sections or lamellae transferred using integrated nanomanipulator technology. 

Precise Volumetric Structural and Chemical Characterization Through Multimodal 3D Tomography 

Multimodal 3D FIB-SEM tomography extends ToF-SIMS beyond conventional depth profiling, enabling accurate volumetric characterization of materials. Correlation of ToF-SIMS chemical information with SEM structural data and EDS and EBSD maps provides a comprehensive 3D view of material structure and composition. 

Flexible Charge Compensation Strategies 

Reliable analysis of insulating and charging materials through localized charge compensation using the SEM electron beam for small regions of interest, complemented by an optional Flood Gun for larger-area applications. 

Inert Gas Transfer and Cryogenic Workflows for Sensitive Materials 

Seamless inert gas transfer and cryogenic workflows preserve sensitive materials in their native state from preparation to analysis, enabling high-fidelity ToF-SIMS characterization of reactive and beam-sensitive samples. 

Reactive Gas-Assisted Characterization and Sample Preparation 

Reactive gas-assisted workflows enabled by integrated gas injection system (GIS) technologies enhance ToF-SIMS ionization efficiency and signal intensity, improving analytical sensitivity and chemical characterization. 

In Situ Surface Characterization with SEM and SPM 

Correlate nanoscale surface properties, including topography and roughness, with ToF-SIMS chemical information from the same region of interest, providing deeper insight into the relationship between surface characteristics and material chemistry

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FIB-SEM INTEGRATED TOF-SIMS

Technical specification

ToF-SIMS type

C-TOF (Compact)

H-TOF (High-mass-resolution) 

Mass resolution

>800

>3500

Minimum mass range (Th)

0 - 170

0 - 240

Detection limit* (ppm)

C-TOF

H-TOF

Ga⁺ FIB

3

10

Xe⁺ FIB

1.5

5

Spatial resolution* (nm)

C-TOF

H-TOF

Ga⁺ FIB

40

40

Xe⁺ FIB

60

60

Depth resolution* (nm)

3

6

*Depends on FIB performance, operating conditions, and sample composition. 

ToF-SIMS type

C-TOF (Compact)

H-TOF (High-mass-resolution) 

Mass resolution

>800

>3500

Minimum mass range (Th)

0 - 170

0 - 240

Detection limit* (ppm)

C-TOF

H-TOF

Ga⁺ FIB

3

10

Xe⁺ FIB

1.5

5

Spatial resolution* (nm)

C-TOF

H-TOF

Ga⁺ FIB

40

40

Xe⁺ FIB

60

60

Depth resolution* (nm)

3

6

*Depends on FIB performance, operating conditions, and sample composition. 
AMBER-X-TOF_right-1

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Tescan Brno
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623 00 Brno
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