Modern semiconductor failure analysis demands delayering that is fast and precise, while also protecting delicate structures. Tescan workflows create smooth, uniform surfaces, stop exactly at the target layer, and preserve integrity for immediate, reliable analysis.
Prepare samples for defect localization or in-situ electrical testing, cleanly and efficiently, across sub-20 nm nodes and complex I/O stacks.
Use an integrated plasma FIB workflow with precise endpoint control and in-situ nanoprobing to achieve clean, planar delayering of sub-20 nm semiconductor nodes. This approach preserves structural integrity and prepares samples for immediate electrical and structural analysis.
Combine femtosecond laser ablation for rapid material removal with precision Xe plasma FIB polishing to enable fast, accurate, low-damage failure analysis of large and complex semiconductor devices. This hybrid workflow improves throughput and preserves critical structures, from package to nanoscale.
Tescan AMBER X gives you the tools to study battery electrodes, from nanoscale interfaces to bulk. SEM imaging, plasma FIB milling, and chemical analysis in one workflow let you track degradation and perform 3D reconstructions with precise, repeatable results.
Tescan Essence™ automates plasma FIB delayering for thick-layer semiconductor analysis. Shallow-angle exposure and live BSE monitoring give you controlled removal of upper metal layers and complex chip regions with precision and consistency.
