In semiconductor manufacturing, the failure analysis workflow consists of several steps, including chip delayering, defect isolation, and defect characterization, which require the use of multiple tools. Moreover, conventional deprocessing techniques are coarse, lack localized precision, and often damage fragile atomic-level structures. This can alter the electrical properties of the analyzed device, leading to unreliable results.
Discover how the Xe⁺ plasma FIB-SEM AMBER X 2 platform enables seamless deprocessing of sub-20 nm nodes without affecting their electrical properties.
