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Achieve Curtaining-Free Delayering of Upper Metal Layers with Tescan Low Angle Polishing 

Apply Tescan Low Angle Polishing with in-column BSE monitoring to control real-time delayering and visualize metal-via transitions layer by layer.

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Low Angle Polishing for delayering of upper thicker layers
Low Angle Polishing for delayering of upper thicker layers-mobile
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Control Layer-by-Layer Deprocessing with Curtaining-Free Low Angle Polishing 

Thick I/O stacks and upper metal layers in advanced semiconductor nodes are notoriously difficult to deprocess with orthogonal FIB methods. Curtaining, non-uniform surfaces, and uncertain endpoints often obscure critical device features and limit reliability in analysis.

Tescan Essence™ Low Angle Polishing uses plasma FIB at shallow tilt angles with automated multi-angle rotation to achieve uniform, curtaining-free surfaces. In-column BSE monitoring provides real-time visualization of metal-via transitions, enabling precise, reproducible layer-by-layer deprocessing at 14 nm and beyond.

Why Use Low Angle Polishing Workflows

for Delayering Thick I/O and Upper Metal Layers?

01
Root of the Problem

Why Orthogonal FIB Struggles in Delayering Thick I/O and Upper Metal Layers

Accurate semiconductor failure analysis depends on clean, uniform deprocessing. Yet standard orthogonal FIB approaches often fail when applied to thick I/O stacks and upper interconnect layers.

Curtaining artifacts, uneven removal, and uncertain endpoints obscure device features and complicate analysis. Non-planar structures and passivation layers add further challenges, making reproducibility difficult and slowing workflows.

Tescan Essence™ Low Angle Polishing overcomes these limitations with a plasma FIB strategy that combines low-angle incidence, automated multi-angle rotation, and real-time BSE monitoring. The result is smooth, curtaining-free surfaces that preserve structural fidelity and enable controlled, layer-by-layer deprocessing.

  • Low-angle plasma FIB minimizes curtaining in thick I/O stacks
  • Automated four-direction polishing ensures reproducible surfaces
  • In-column BSE monitoring provides real-time endpoint detection
  • Uniform delayering of non-planar and passivation layers
  • Reliable workflows reduce operator variability and improve efficiency

Gain full control over upper layer deprocessing and achieve consistent results with Tescan Low Angle Polishing. 

02
Materials and Methods

How Low Angle Polishing Was Applied to Delayer Thick I/O and Upper Metal Layers

A semiconductor device containing a thick I/O region was selected to demonstrate low angle plasma FIB polishing. Initial localization of the area of interest was performed in SEM mode, with in-column BSE imaging used to evaluate surface morphology and identify layer transitions.

Plasma FIB milling was then performed at a shallow tilt angle of 2–4°, combined with automated four-direction stage rotation. This ensured uniform ion beam exposure and minimized curtaining artifacts during material removal.

Real-time BSE monitoring within the Tescan Essence™ interface provided live visualization of metal and via transitions, with intensity plots guiding endpoint detection and layer control. SEM image logging was used throughout the process for documentation and verification.

The integrated workflow enabled smooth, reproducible delayering of upper metal layers and passivation regions, producing clean cross-sections suitable for failure analysis and structural characterization.

03
Results and Discussion

Curtaining-Free Delayering Enables Reliable Analysis of Upper Metal Stacks

Tescan Essence™ Low Angle Polishing produced smooth, uniform surfaces across the I/O region, even in thick upper interconnect layers. Plasma FIB milling at low tilt angles with automated four-direction rotation eliminated curtaining artifacts that normally obscure structures.

Real-time in-column BSE monitoring provided continuous visibility of metal–via transitions, enabling precise endpoint detection and controlled removal of individual layers. Intensity plots confirmed reproducible layer-by-layer deprocessing at the 14 nm node.

SEM images logged throughout the workflow verified uniform surface quality and showed that non-planar structures and passivation regions were polished without distortion. Compared to orthogonal FIB methods, low angle polishing improved reproducibility, reduced operator dependency, and preserved structural fidelity.

This workflow demonstrates clear advantages for semiconductor failure analysis and process verification, delivering consistent results across complex I/O stacks and reliable access to underlying device layers. 

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Tescan Instruments & Technology

Used in This Workflow

Tescan AMBER X 2 – Plasma FIB-SEM 

A unique plasma FIB-SEM combining a Xenon plasma FIB with a field-free UHR SEM column, enabling high-throughput milling and high-resolution imaging. Tescan AMBER™ X 2 is ideal for delayering including thick I/O regions and upper interconnect stacks, delivering curtaining-free surfaces that preserve device structures for further analysis.

 

  • Xenon plasma FIB: ensures efficient, large-area material removal

  • Ultra-high-resolution SEM imaging: verifies surface quality during delayering

  • Field-free design: allows precise imaging of delicate structures without distortion 
AMBER-X2
Find out more

Tescan Essence™ Low Angle Polishing (LAP) Module 

A dedicated software module that extends plasma FIB workflows with shallow-angle incidence and automated four-direction rotation. The Essence™ LAP module enables smooth, reproducible delayering of thick I/O and non-planar regions, while integrated in-column BSE monitoring ensures accurate layer-by-layer endpoint detection.

 

  • Low-angle incidence: eliminates curtaining artifacts in thick I/O stacks

  • Automated four-angle rotation: produces uniform, reproducible surfaces

  • In-column BSE monitoring: provides real-time visibility of metal–via transitions

  • SEM image logging: ensures complete documentation and verification

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Where can you find us:

Tescan
Libušina třída 21
623 00 Brno 
Czech Republic

info@Tescan.com 

130405923 us US 37.09024 -95.712891 25.3575 29.349345 20.67957527 42.082797 39.91384763 -33.693421 13.93320106 3.039986586 31.997988 38.050985 47.579533 48.1485965 58.375799 54.663142 19.195447 56.975106 50.493053 45.868592 10.79556993 44.35660598 43.2371604 55.536415 14.557577179752773 32.100937 -6.116829 -6.212299277967318 23.7104 -33.471062 31.998740087 -23.69149395 43.462349 51.529848 49.1893523 49.197486 25.072375 31.075811 1.299027 40.676979 52.30150662 51.013813 35.684121 37.479653 52.246622 40.581349 39.911632 -26.1811371 41.818215 33.429928 -12.08688

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