Deliver Reliable Sub-10 nm Delayering
Achieve uniform, artifact-free results with Nanoflat, Chase, and C-Maze chemistries designed for advanced nodes.
Tescan AMBER X 2 for Semiconductors
Uncover the electrical and structural details of today’s most advanced devices with Tescan AMBER X 2 Plasma FIB-SEM. Purpose-built for semiconductor applications, AMBER X 2 combines Xe plasma FIB with proprietary Nanoflat, Chase, and C-Maze chemistries to deliver uniform, artifact-free delayering at sub-10 nm nodes.
The system ensures you have reproducible workflows across logic, memory, and I/O regions, supporting electrical fault isolation, failure analysis, and transistor-level probing.
- Perform artifact-free delayering with Nanoflat, Chase, and C-Maze chemistries
- Protect device integrity using low-kV Xe Plasma FIB milling
- Control every step with end-point detection and live monitoring
- Integrate delayering with in situ nanoprobing in a single workflow
- Deprocess I/O and thick metal layers using low angle polishing
- Resolve critical details with BrightBeam™ UHR SEM imaging at sub-500 eV
FOR SEMICONDUCTOR RESEARCH APPLICATIONS
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Simplify Sub-20 nm Node Delayering for In-Situ Nanoprobing with Tescan AMBER X 2
Use Tescan AMBER X 2 with Mistral plasma FIB to perform Sub-20 nm node delayering that enables precise endpoint detection and in-situ nanoprobing of advanced transistors.
Achieve Curtaining-Free Delayering of Upper Metal Layers with Tescan Low Angle Polishing
Apply Tescan Low Angle Polishing with in-column BSE monitoring to control real-time delayering and visualize metal-via transitions layer by layer.
Deliver Flat, Curtaining-Free Cross-Sections Using Tescan TRUE X-sectioning
Combine TRUE X-sectioning with Rocking Stage to achieve curtaining-free, wide-area cross-sections for fast and reliable semiconductor failure analysis.
AUTOMATION THAT IMPROVES CONSISTENCY
Tescan AMBER X 2 is designed to work seamlessly with the Tescan Delayering™ module. Automated recipe control and factory-defined templates let you carry out repeatable delayering across logic, memory, and I/O regions, reducing operator variability and ensuring consistent results.
The system integrates advanced monitoring tools, including end-point detection and live signal tracking, so you can stop precisely at the target layer without over- or under-milling. Proprietary Nanoflat, Chase, and C-Maze chemistries are optimized within the software, giving you reproducible outcomes at sub-10 nm nodes.
For challenging applications, AMBER X 2 supports low angle polishing with a dedicated clamp holder, delivering planar deprocessing of thick metal and I/O layers. Together, these capabilities streamline semiconductor workflows, helping you move efficiently from delayering to imaging and in situ nanoprobing in a single Plasma FIB-SEM platform.
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