Perform TEM Sample Preparation Without Ion Implantation Using Tescan AMBER X 2 

Why Standard FIB Preparation Fails in TEM Sample Preparation

Preparing high-quality TEM samples requires ultra-thin, electron-transparent lamellae where structural and chemical details remain intact. Conventional Ga FIB techniques often introduce gallium implantation, amorphization, or surface contamination that obscure true material features. Sensitive regions such as thin films, grain boundaries, and semiconductor interfaces are particularly prone to beam damage.

Even minor implantation or amorphization can distort lattice information, compromise spectroscopy, or mask defects at the nanoscale. This limits the reliability of both imaging and analysis in advanced materials research.

TESCAN AMBER X 2 addresses these challenges with a plasma FIB-SEM workflow optimized for high-quality TEM sample preparation.

• Xe plasma FIB reduces ion implantation and amorphization
• Wide beam current range enables both fast milling and fine thinning
• High-resolution Mistral™ column preserves structural fidelity

How TEM Samples Were Prepared Using TESCAN AMBER X 2 Plasma FIB-SEM

A nitride thin film on an insulating substrate was selected to demonstrate site-specific TEM sample preparation. The region of interest was identified using high-resolution SEM imaging at low kV to ensure precise targeting of the interface.

Lamella preparation was performed with the Xe plasma FIB at 30 keV using a wide current range, enabling both efficient bulk milling and controlled thinning. A protective Pt layer was deposited before milling to safeguard the surface. Final polishing at low kV minimized amorphization and preserved lattice detail.

This workflow produced electron-transparent lamellae with minimal implantation and artifact-free interfaces, suitable for atomic-scale imaging and microstructural analysis.

TESCAN AMBER X 2 enabled reliable preparation of electron-transparent lamellae for high-resolution TEM and APT analysis. Xe plasma milling preserved structural integrity while minimizing ion implantation and amorphization across sensitive interfaces.

SEM inspection confirmed well-defined boundaries in nitride thin films, grain interfaces, and insulating substrates. Low-kV imaging delivered strong contrast for assessing defects, voids, and interfacial quality. Protective Pt layers and final low-kV polishing ensured lattice detail was retained without surface contamination.

Prepared lamellae exhibited uniform thickness, intact crystallinity, and stable geometry across challenging materials. Even in beam-sensitive regions, structural fidelity was preserved. This workflow delivers high-quality samples for atomic-scale imaging, chemical mapping, and microstructural investigations in advanced materials research.

Common Challenges in High-Resolution Material Analysis

Advanced materials used in energy storage, aerospace, nanotechnology, and biomedical applications require in-depth structural insights. However, traditional imaging techniques often fall short when analyzing multi-phase structures, nanoscale defects, and buried interfaces.

FIB-SEM tomography addresses these challenges by providing:

• Sub-nanometer precision in 3D imaging for detailed microstructural analysis.
  
• Site-specific cross-sectioning to study buried features without sample destruction.
  
• Multi-modal integration with EDS and EBSD for correlative material characterization.