Warpage is a critical reliability challenge in semiconductor packaging, driving yield loss, delamination, die cracking, and alignment errors in high-density devices. Conventional techniques such as shadow Moiré and digital image correlation are limited to surface measurements, leaving internal deformation mechanisms largely inaccessible.
Discover how in-situ micro-CT enables non-destructive, full 3D quantification of thermally induced displacements within semiconductor packages, revealing internal structural changes beyond the reach of surface-based methods. This approach provides deeper insights into warpage behavior and supports more reliable semiconductor design.
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