Rapid Development of Functional Devices at Nanoscale  

Integrate high-density plasmonic nanoarrays directly onto silicon photodetectors to boost near-infrared photon absorption. This electron-beam lithography workflow delivers precise alignment, reproducible fabrication, and up to threefold efficiency enhancement without degrading device performance.

• Nanoscale patterning: Silver nanostrips (1D) and nanosquares (2D) fabricated with sub-10 nm precision
• Optimized resist & beam parameters: Ensures stable structures with lift-off compatibility
• Plasmonic enhancement: Surface plasmon polaritons confine light, increasing NIR absorption
• Validated performance: Demonstrated ~45% quantum efficiency improvement at 950 nm

Use Tescan QuiiN with a heating stage and focused ion beam to engineer shallow, high-density NV centers in diamond at 800 °C. This workflow enables colour center creation with precision and brightness while preventing crystal damage.

• Focused ion beam precision: Control NV center placement with high accuracy
• High-temperature implantation: In-situ lattice recovery prevents graphitization at high fluence
• Bright shallow NVs: 3–4× stronger photoluminescence compared to room temperature processes
• Stable spin properties: ODMR validation confirms narrow linewidths for quantum sensing
• Versatile quantum defects: Supports NV as well as SiV, GeV, and co-doped structures

Leverage optimized electron beam lithography with biomolecule tethering to fabricate large-area nanopatterns that control cell behavior. This workflow enables precise nanoscale distribution of proteins, revealing how geometry influences adhesion, spreading, and signaling in human stem cells.

• High-resolution nanopatterning: Sub-100 nm hexagonal arrays across 500 × 500 µm² areas
  
  
• Biocompatible surfaces: ITO coatings for conductivity, Platinum structures for biocompability and PEG layers to block nonspecific binding
  
  
• Scalable design: MACRO (mm), MICRO (µm), and NANO (nm) patterns for multi-scale cell studies
  
  
• Functional outcomes: Pattern density modulates ephrin clustering and FYN colocalization, confirming nanoscale control of signaling

Leverage a fully integrated FIB-SEM workflow to fabricate, manipulate, and characterize gallium-doped silicon nanowires. This approach unifies implantation, electron beam lithography of conductive contacts, placement, and electrical testing within one system, accelerating sensor development and ensuring reproducible results.

• Focused ion beam implantation: Precisely dope silicon to tune nanowire conductivity
• Fabricate conductive contacts: Utilise fully integrated electron beam lithography for device exposure
• Nanomanipulation & placement: Transfer individual nanowires onto prepared electrodes with FIBID welding
• Integrated characterization: Perform SEM imaging, AFM analysis, and in-situ electrical I–V measurements
• Accelerated prototyping: Streamlined workflow reduces instrument handoffs and enables reproducible device fabrication