Combine Tescan’s 4D-STEM workflow with integrated beam precession to achieve fast, accurate phase and orientation mapping in semiconductor devices. Structural insights are delivered in under 15 minutes, supporting both failure analysis and process optimization.
- Precession-assisted 4D-STEM: Minimizes dynamical effects and captures crystalline, amorphous, and mixed-phase regions in a single scan
- Real-time mapping: Provides immediate results with automated cross-correlation and no manual tuning
- High-throughput analysis: Reveals structural changes in materials like PCM for reliable process development