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Reveal Bonding Layers Clearly During Physical Failure Analysis of MEMS Motion Sensors 

Perform physical failure analysis of MEMS motion sensors using Tescan SOLARIS X 2 with artifact-free cross-sectioning that protects bonding layers and eliminates delamination risks.

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Physical Failure Analysis of a MEMS Motion Sensor
Physical Failure Analysis of a MEMS Motion Sensor
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Achieve Large-Area MEMS Cross-Sections That Preserve Bonding Layer Integrity

MEMS motion sensors contain fragile wafer-to-wafer cavity structures where metallic bonding layers directly influence sensor function. These interfaces are extremely sensitive and often fail during conventional polishing, which can introduce delamination, tearing, or complete structural loss.

TESCAN SOLARIS X combines high-current Xe plasma FIB milling with advanced SEM imaging to produce wide, artifact-free MEMS cross-sections up to 1 mm. Preserve delicate bonding interfaces without mechanical stress. Visualize wafer-to-wafer metallic layers with enhanced contrast using Mid-Angle BSE detection. Perform reliable physical failure analysis with precision and structural clarity across the full sensor stack.

Why Perform Physical Failure Analysis of MEMS

with TESCAN SOLARIS X?

01
Root of the Problem

Why Mechanical Polishing Fails in Physical Failure Analysis of MEMS

Accurate inspection of MEMS motion sensors requires clear access to wafer-to-wafer bonding layers. Yet traditional mechanical polishing introduces stress and damage that compromise analysis. Delamination, tearing, or complete loss of the metallic interface are common, preventing reliable evaluation of adhesion quality or defect sites.

These fragile, multilayer structures demand a non-mechanical preparation method that maintains integrity while exposing internal layers at scale. Without it, critical information about sensor packaging and bonding performance remains hidden, delaying root cause identification.

TESCAN SOLARIS X with Xe plasma FIB-SEM solves these issues by delivering large, artifact-free cross-sections and high-contrast SEM imaging of delicate bonding layers.

02
Materials and Methods

How Plasma FIB-SEM Enabled Physical Failure Analysis of MEMS Motion Sensors

A MEMS motion sensor containing wafer-to-wafer metallic bonding was selected to demonstrate plasma FIB-SEM preparation and imaging. A 1 mm-wide, 507 µm-deep cross-section was milled using the Mistral™ Xe plasma column at high beam current, ensuring rapid material removal while preserving surface integrity.

Imaging was performed with the Triglav™ SEM column at 2 keV, using Mid-Angle BSE detection to enhance contrast within metallic bonding layers. The controlled plasma milling strategy prevented delamination or structural tearing, delivering smooth sidewalls across the entire cross-section.

This integrated workflow enabled direct visualization of internal bonding interfaces with high clarity, avoiding the artifacts and structural loss typical of mechanical polishing.

03
Results and Discussion

Accurate Cross-Sectioning Preserves MEMS Bonding Layers for Reliable Failure Analysis

TESCAN SOLARIS X enabled preparation of a 1 mm-wide cross-section through a MEMS motion sensor, exposing the wafer-to-wafer bonding interface without delamination or tearing. The metallic bonding layer remained intact, maintaining adhesion structures that are often destroyed by mechanical polishing.

Low-kV SEM imaging with Mid-Angle BSE provided high-contrast visualization of bonding seams and metallic interfaces, revealing composition differences and adhesion quality with clarity. Clean sidewalls and smooth surface geometry ensured that structural details were preserved across the full depth of the cross-section.

The workflow delivered artifact-free results within routine analysis times, demonstrating suitability for high-throughput failure analysis of MEMS devices. Compared to mechanical methods, plasma FIB-SEM offered superior reliability, higher resolution, and reduced risk of sample loss.

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Tescan Instruments & Technology

Used in This Workflow

TESCAN SOLARIS X 2 with Plasma FIB-SEM 

TESCAN SOLARIS X 2 combines high-throughput Xe plasma FIB milling with advanced SEM imaging for precise, large-area cross-sectioning of MEMS devices. This integrated system enables artifact-free preparation of fragile wafer-to-wafer bonding interfaces, supporting reliable physical failure analysis of MEMS motion sensors.

 

You can prepare wide cross-sections, preserve delicate metallic layers, and visualize bonding seams with high contrast — all within a single, efficient workflow.

 

  • Mistral™ Xe plasma column: delivers fast, large-area milling up to 1 mm with clean sidewalls

  • Triglav™ SEM column with TriLens™ optics: enables ultra-high-resolution imaging at low accelerating voltages

  • Mid-Angle BSE detection: enhances contrast for metallic bonding layers and adhesion seams

  • Integrated workflow control: ensures accurate endpointing and avoids delamination or structural loss

  • High-throughput operation: achieve routine analysis times without compromising detail or reliability 
SOLARIS-X2
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Where can you find us:

Tescan
Libušina třída 21
623 00 Brno 
Czech Republic

info@Tescan.com 

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