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Deliver Flat, Curtaining-Free Cross-Sections Using Tescan TRUE X-sectioning 

Combine TRUE X-sectioning with Rocking Stage to achieve curtaining-free, wide-area cross-sections for fast and reliable semiconductor failure analysis.

Increasing FA Throughput in Challenging Samples
Increasing FA Throughput in Challenging Samples
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Increase FA Throughput in Complex Packages with Tescan TRUE X-sectioning

Modern semiconductor packages such as BGAs, TSV arrays, and bond wires present major challenges for Plasma FIB workflows. Different milling rates across metals and polymers cause curtaining and terraces, while protective coatings and void filling add time without guaranteeing flat cross-sections-slowing analysis and limiting throughput.

Tescan TRUE X-sectioning with Rocking Stage solves these issues. Hard mask milling enables high-current Xe+ Plasma FIB preparation of wide, artifact-free cross-sections, while stage rocking suppresses curtaining. A ready-to-use mask library with SEM endpoint detection ensures faster, reproducible sample prep. This delivers up to 50% higher throughput for advanced failure analysis.

Why Increase Failure Analysis Throughput

with Tescan TRUE X-sectioning?

01
Root of the Problem

Why Conventional Plasma FIB Workflows Fall Short in Failure Analysis

Modern semiconductor packages combine metals, polymers, and void-filled structures with vastly different milling rates. Conventional Xe+ Plasma FIB workflows struggle to deliver flat cross-sections in these conditions. Terracing, ripples, and curtaining obscure fine details and reduce the accuracy of defect localization.

To compensate, analysts rely on thick platinum deposition or void filling, which add time and handling steps. Even then, large-area cross-sections remain inconsistent, and throughput drops when operators must switch to low-current milling.

Key limitations include:

  • Curtaining artifacts in heterogeneous samples
  • Extended preparation times with protective coatings
  • Extra workflow steps for void handling
  • Reduced throughput when milling at low currents

TESCAN TRUE X-sectioning with Rocking Stage overcomes these issues, enabling artifact-free, high-throughput cross-sections in today’s most complex devices.

02
Methods and Materials

How Artifact-Free Cross-Sections Were Prepared with Tescan TRUE X-sectioning

Samples included BGAs, TSV arrays, bond wires in mold compound, and OLED displays. Wide cross-sections up to 400 µm were prepared on a Tescan Xe+ Plasma FIB using hard mask-assisted TRUE X-sectioning.

Pre-fabricated silicon masks were positioned with a nanomanipulator, enabling high-current milling without thick platinum layers or void filling. The Rocking Stage tilted samples during milling, reducing curtaining and topography-driven artifacts.

Live SEM imaging provided endpoint detection for precise defect targeting. The same workflow was also applied to TEM lamellae, demonstrating versatility across failure analysis tasks.

This approach delivered large-area, artifact-free cross-sections at high currents—cutting preparation time and improving reproducibility in complex devices.

03
Results and Discussion

TRUE X-sectioning Delivers Flat, High-Throughput Cross-Sections in Complex Devices

Tescan TRUE X-sectioning with Rocking Stage enabled wide, artifact-free cross-sections in BGAs, TSV arrays, OLED displays, and sensor packages. High-current Xe+ Plasma FIB milling with hard masks eliminated curtaining and terraces, producing smooth, interpretable surfaces for defect localization.

SEM endpoint detection ensured precise targeting of buried structures, while the same workflow supported reproducible TEM lamella preparation. Compared to conventional workflows, TRUE X-sectioning reduced preparation time by up to 50% without compromising quality.

These results demonstrate that mask-assisted Plasma FIB and Rocking Stage technology combine throughput and surface integrity—providing reliable, consistent failure analysis across the most challenging semiconductor samples.

 

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Tescan Instruments & Technology

Used in This Workflow

Tescan Plasma FIB-SEM – High-Throughput Xe+ Ion Milling

Tescan Plasma FIB-SEM systems use Xe+ ions for high-current milling and wide-area cross-sections. They integrate SEM imaging and Plasma FIB precision, enabling preparation of cross-sections hundreds of micrometers wide.


Analyze BGAs, TSVs, bond wires, OLEDs, and sensors with artifact-free surfaces, prepare TEM lamellae, and use live SEM endpoint detection for accurate targeting—all in one workflow.

  • Xe+ Plasma FIB: high-current milling for wide cross-sections

  • Integrated SEM: real-time endpoint detection

  • Large-area prep: up to 1 mm without artifacts

  • Ga-free source: minimizes amorphization

  • Multi-application use: FA, OLEDs, TSVs, lamella prep 

Tescan Rocking Stage – Curtaining Suppression

The Rocking Stage tilts samples during Plasma FIB milling to suppress curtaining in multi-material structures. It delivers smooth surfaces across wide areas while supporting high-current milling speeds.

  • Active sample rocking: reduces curtaining and terraces

  • Wide-area compatible: preserves surface integrity

  • Streamlined prep: less need for coatings or void filling

  • High-throughput: artifact-free at high beam currents

Tescan TRUE X-sectioning Mask Set – Pre-Fabricated Hard Masks

The TRUE X-sectioning mask set contains hundreds of pre-fabricated hard masks for artifact-free Plasma FIB cross-sectioning. Masks are placed with a nanomanipulator, enabling high-current milling without thick platinum layers or void filling.


Select from a versatile library for BGAs, TSVs, OLEDs, sensors, and TEM lamella workflows with faster turnaround and reproducible quality.

  • Pre-fabricated masks: ready for immediate use

  • Hard mask milling: flat, curtaining-free surfaces

  • Versatile library: 970 designs for diverse tasks

  • Efficiency boost: reduces prep time by up to 50%

  • SEM endpoint detection: precise defect targeting 

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Where can you find us:

Tescan
Libušina třída 21
623 00 Brno 
Czech Republic

info@Tescan.com 

130405923 us US 37.09024 -95.712891 25.3575 29.349345 20.67957527 42.082797 39.91384763 -33.693421 13.93320106 3.039986586 31.997988 38.050985 47.579533 48.1485965 58.375799 54.663142 19.195447 56.975106 50.493053 45.868592 10.79556993 44.35660598 43.2371604 55.536415 14.557577179752773 32.100937 -6.116829 -6.212299277967318 23.7104 -33.471062 31.998740087 -23.69149395 43.462349 51.529848 49.1893523 49.197486 25.072375 31.075811 1.299027 40.676979 52.30150662 51.013813 35.684121 37.479653 52.246622 40.581349 39.911632 -26.1811371 41.818215 33.429928 -12.08688

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