Accelerate Failure Analysis with Hybrid Laser and Plasma FIB Workflow  

Streamline Cross-Sectioning of Complex Devices with Hybrid Laser and Plasma FIB

As semiconductor devices grow in size and complexity, preparing cross-sections for failure analysis becomes increasingly difficult. Plasma FIB milling is precise but too slow for bulk removal, while mechanical sectioning introduces stress, chipping, and delamination. In layered assemblies like AMOLED displays or 3D memory stacks, small errors in end pointing can damage internal layers and compromise analysis.

The Hybrid Laser and Plasma FIB Workflow resolves these challenges by combining femtosecond laser ablation for rapid bulk removal with Xe plasma FIB-SEM for precision polishing. With bitmap overlays and CAD/GDS correlation, it ensures accurate navigation and geometry-true sections—clean, SEM-ready surfaces across flip-chips, memory stacks, and advanced displays in minutes.

Why Cross-Section Complex Semiconductor Devices with a Hybrid Laser and Plasma FIB Workflow

Expose Large Semiconductor Packages with Clean Cross-Sections

Achieve millimeter-scale openings using femtosecond laser ablation to reveal package-level structures. Prevent mechanical damage, chipping, and artifacts while preparing intact, inspection-ready samples for SEM and EDS analysis.

Reveal Complete Memory Stacks in Minutes

Mill entire 3D memory die stacks using femtosecond laser ablation to replace hours of plasma FIB milling. Expose intact structures through large-volume removal while preserving delicate layers for follow-up SEM and EDS analysis.

Combine Laser Speed with Plasma FIB Precision for HBM Analysis

Create smooth, artifact-free cross-sections of high-bandwidth memory assemblies by pairing laser trenching with plasma FIB polishing. Achieve clean surfaces that preserve internal geometry and support reliable SEM and EDS inspection.

Prepare Rapid Cross-Sections of MLCC Components

Section multilayer ceramic capacitors with femtosecond laser ablation to expose delicate internal layers without cracking or delamination. Generate SEM-ready surfaces in minutes, preserving fine structures for EDS and reliability analysis.

Compare Plasma FIB and Laser Preparation for Faster Results

Accelerate bulk material removal with femtosecond laser ablation while avoiding chipping, drift, or thermal damage common in plasma FIB-only workflows. Achieve clean, artifact-free cross-sections in minutes instead of hours, ensuring reliable follow-up analysis.

Correct Taper Angles for Geometry-True Cross-Sections

Adjust laser trench geometry with tilt-capable stages to eliminate tapering during large-area cross-sectioning. Ensure straight, accurate walls that simplify follow-up plasma FIB polishing and provide SEM-ready surfaces for inspection.

Contents 

1. Root of the Problem

Why Conventional Cross-Sectioning Workflows Fail in Complex Devices

Advanced packages like AMOLED displays, flip-chips, and 3D memory stacks demand precise failure analysis, yet traditional sample preparation creates major obstacles. Plasma FIB milling alone is accurate but impractically slow for large-volume removal, often taking hours to expose millimeter-scale areas. Mechanical sawing is faster, but introduces artifacts such as chipping, delamination, and stress that distort delicate internal layers.

Navigating layered assemblies compounds the problem—manual endpointing and tool-switching increase the risk of damaging critical structures. These limitations reduce efficiency, compromise data integrity, and slow semiconductor development.

The Hybrid Laser and Plasma FIB Workflow eliminates these barriers by combining laser speed with FIB precision for fast, artifact-free cross-sections.

2. Materials and Methods

How Hybrid Laser and Plasma FIB Cross-Sectioning Was Performed

Large-area semiconductor samples, including flip-chips, AMOLED panels, and stacked memory dies, were prepared using a combined femtosecond laser and Xe plasma FIB-SEM workflow.

Femtosecond laser ablation enabled rapid bulk removal of millimeter-scale regions, replacing hours of plasma FIB milling. Plasma FIB polishing then refined surfaces to produce smooth, artifact-free cross-sections suitable for SEM and EDS inspection.

Bitmap image overlays, CAD navigation, and GDS alignment ensured precise targeting and geometry-true sectioning, while tilt-capable laser stages corrected taper angles. This fully integrated approach delivered clean, reproducible cross-sections across diverse device architectures.

3. Results and Discussion

Hybrid Cross-Sectioning Demonstrates Speed and Integrity Across Semiconductor Devices

The Hybrid Laser and Plasma FIB Workflow enabled rapid, large-volume cross-sectioning of flip-chips, AMOLED displays, and 3D memory stacks. Laser ablation reduced bulk removal from hours to minutes, while plasma FIB polishing delivered smooth, geometry-true surfaces free from chipping or delamination.

SEM imaging confirmed intact internal structures, with delicate layers preserved for EDS and further analysis. CAD/GDS overlay navigation ensured accurate end pointing across complex assemblies, supporting reproducible preparation.

Together, these results demonstrate faster, artifact-free workflows that outperform conventional plasma FIB or mechanical sawing in both throughput and sample integrity.