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In this video, Gino speaks with Hervé Macé, Global Business Development Director for Semiconductors at Tescan, about the challenges of locating and accessing defects buried within complex three-dimensional semiconductor structures. Hervé explains how an effective workflow combines non-destructive defect localization, controlled laser processing, and FIB-SEM preparation to improve efficiency while preserving structural integrity and sample quality. Key topics covered in this discussion include: Challenges in Failure Analysis: How HBM, heterogeneous integration, and advanced packaging create complex 3D structures that require specialized workflows for locating and accessing buried defects. Gas-Assisted Femtosecond Laser Processing: How Tescan FemtoChisel™ improves throughput and process control in cross-sectioning, decapsulation, delayering, and large-volume material removal while helping preserve surface quality and limit unwanted structural and thermal effects. Laser and FIB-SEM Integration: Why femtosecond laser processing is used for rapid access and large-volume material removal, followed by FIB-SEM for final polishing, high-resolution imaging, and analytical characterization. SEMICON Taiwan Forum Preview: Hervé also previews how FemtoChisel™ fits within a broader failure analysis workflow and the application challenges discussed during Tescan’s forum presentation. 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